Why drift velocity saturation

The leakage current might seem to have no relation to saturation velocities, but both are high electric field phenomena. The author introduces two concepts to explain the increasing generation rate: carriers, electrons and holes, move much faster than their saturation velocities between each collision with the semiconductor lattice; and the actual speed is proportional to the applied electric field strength.

A new model of the saturation velocity for electrons and holes could result from these concepts and the conservation law of momentum. Article :. DOI: DavideM 4 4 silver badges 16 16 bronze badges. Or is this supposed to be a characteristic of the material itself? If so, it's something about which I'm unfamiliar. I'm not familiar with pinched channels..

Add a comment. Active Oldest Votes. T 2, 3 3 silver badges 9 9 bronze badges. What's the difference? They both require P and N-doped sections do they not?

In contrast, the performance of p-channel and n-channel MOSFET-like devices depends on charge carrier mobilities, and hole mobility is a tiny fraction of electron mobility in GaAs. The overall device would lose the advantage of GaAs high electron mobility. At best, the performance could be made comparable to that of Si devices at a significantly higher price of GaAs materials.

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